Programming of nonvolatile memory cells

A method for programming an NROM cell which includes the steps of applying a drain, a source and a gate voltage to the cell and verifying a programmed or a non-programmed state of the cell. If the cell is in the non-programmed state, the method includes the steps of increasing the drain voltage and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BLOOM ILAN, COHEN ZEEV, MAAYAN EDUARDO, EITAN BOAZ, FINZI DAVID
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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