Method for manufacturing an isolation trench filled with a high-density plasma-chemical vapor deposition oxide

A method for filling an isolation trench in a semiconductor substrate includes the steps of forming a first silicon oxide layer on sidewalls and the floor of each trench by an oxidation step, forming a second silicon oxide layer on the sidewalls and floor of the trench by a first high-density plasma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TRUEBY ALEXANDER, WICH-GLASEN ANDREAS, MOLL HANS-PETER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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