Ferrite film formation method and apparatus

A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermedia...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FLEMING DEBRA ANNE, THOMSON JOHN, VAN DOVER ROBERT BRUCE, GRADER GIDEON S, JOHNSON DAVID WILFRED
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRICITY GLASS INDUCTANCES JOINING GLASS TO GLASS OR OTHER MATERIALS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIME, MAGNESIA MAGNETS METALLURGY MINERAL OR SLAG WOOL PERFORMING OPERATIONS REFRACTORIES SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SLAG SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TRANSFORMERS TRANSPORTING TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A ferrite layer formation process that may be performed at a lower temperature than conventional ferrite formation processes. The formation process may produce highly anisotropic structures. A ferrite layer is deposited on a substrate while the substrate is exposed to a magnetic field. An intermediate layer may be positioned between the substrate and the ferrite to promote bonding of the ferrite to the substrate. The process may be performed at temperatures less than 300° C. Ferrite film anisotropy may be achieved by embodiments of the invention in the range of about 1000 dyn-cm/cm3 to about 2x106 dyn-cm/cm3.