Modified vertical MOSFET and methods of formation thereof

The vertical MOSFET structure used in forming dynamic random access memory comprises a gate stack structure comprising one or more silicon nitride spacers; a vertical gate polysilicon region disposed in an array trench, wherein the vertical gate polysilicon region comprises one or more silicon nitri...

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Bibliographische Detailangaben

Hauptverfasser:	NESBIT LARRY, DIVAKARUNI RAMACHANDRA, DEV PRAKASH C, MALIK RAJEEV
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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