Method for forming a capping layer on a copper interconnect

Method for forming a capping layer on a copper interconnect

A method for fabricating a semiconductor device wherein an interconnect made of copper overlying a substrate is pretreated at a specified temperature, for example, at 300° C. or less; and a dielectric film is formed on the copper at a temperature higher than that of the pretreatment. In accordance w...

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1. Verfasser: OHTO KOICHI
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A method for fabricating a semiconductor device wherein an interconnect made of copper overlying a substrate is pretreated at a specified temperature, for example, at 300° C. or less; and a dielectric film is formed on the copper at a temperature higher than that of the pretreatment. In accordance with the present invention, the adhesion between the copper and the dielectric film is improved by conducting the pretreatment of the dielectric film for reducing an oxide layer of the copper surface, and the agglomeration of the copper can be prevented by the pretreatment.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for forming a capping layer on a copper interconnect
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