Method for in-situ removal of side walls in MOM capacitor formation

A method for fabricating an MOM capacitor (10) includes forming a first conductive layer (18) on an insulating support (12, 14), depositing a dielectric film (20) on the conductive layer, and patterning the dielectric film to define the capacitor feature. The dielectric film may comprise a stack of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MOLLOY SIMON J, SEN SIDHARTHA, HARRIS EDWARD BELDEN, LAYADI NACE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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