Method and structure for controlling the interface roughness of cobalt disilicide
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of...
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| creator | CARRUTHERS ROY ARTHUR AGNELLO PAUL DAVID ROY RONNEN ANDREW LAVOIE CHRISTIAN PETERSON KIRK DAVID HARPER JAMES MCKELL EDWIN JORDAN-SWEET JEAN LOUISE CABRAL CYRIL WANG YUN YU PURTELL ROBERT JOSEPH |
| description | A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additives over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2layer in said structure. |
| format | Patent |
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The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additives over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2layer in said structure.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021205&DB=EPODOC&CC=US&NR=2002182836A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021205&DB=EPODOC&CC=US&NR=2002182836A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CARRUTHERS ROY ARTHUR</creatorcontrib><creatorcontrib>AGNELLO PAUL DAVID</creatorcontrib><creatorcontrib>ROY RONNEN ANDREW</creatorcontrib><creatorcontrib>LAVOIE CHRISTIAN</creatorcontrib><creatorcontrib>PETERSON KIRK DAVID</creatorcontrib><creatorcontrib>HARPER JAMES MCKELL EDWIN</creatorcontrib><creatorcontrib>JORDAN-SWEET JEAN LOUISE</creatorcontrib><creatorcontrib>CABRAL CYRIL</creatorcontrib><creatorcontrib>WANG YUN YU</creatorcontrib><creatorcontrib>PURTELL ROBERT JOSEPH</creatorcontrib><title>Method and structure for controlling the interface roughness of cobalt disilicide</title><description>A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. 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The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additives over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2layer in said structure.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method and structure for controlling the interface roughness of cobalt disilicide |
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