Component of gallium arsenide and fabrication method

Component of gallium arsenide and fabrication method

A GaAs substrate is reduced to a thickness of no more than 30 mum, preferably no more than 10 mum, by grinding. The substrate thus has the characteristics of a film, which prevents breakage of the substrate. A metallization can be provided on the rear of the substrate. The thermal characteristics ar...

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1. Verfasser: GRAMBOW PETER
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A GaAs substrate is reduced to a thickness of no more than 30 mum, preferably no more than 10 mum, by grinding. The substrate thus has the characteristics of a film, which prevents breakage of the substrate. A metallization can be provided on the rear of the substrate. The thermal characteristics are improved, because the heat can be transferred to the rear side of the substrate more effectively. Because of the smaller dimensions and good heat dissipation, smaller housings can be utilized. Extremely small holes (micro via holes) are etched into the substrate and provided with via hole fillers.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Component of gallium arsenide and fabrication method
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