Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition

A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction cha...

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Bibliographische Detailangaben
Hauptverfasser: SNEH OFER, GALEWSKI CARL J
Format: Patent
Sprache:eng
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