Manufacture of trench-gate semiconductor devices

The manufacture of a vertical power transistor trench-gate semiconductor device in which the source regions (13) are self-aligned to the trench-gate structures (20,17,11) including the steps of forming a mask (61) on a surface (10a) of a semiconductor body (10), using the mask (61) to form the trenc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUETING RAYMOND J.E, ZANDT IN'T MICHAEL A.A, HIJZEN ERWIN A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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