Actively cooled dispenser system for improved resistivity and phase control in metal CVD from organometallic precursors

An apparatus and method for forming high-purity, high-conductivity metal films deposited by chemical vapor deposition (CVD) on a surface of a substrate is provided. The apparatus includes a cooling system which is in thermal contact with a precursor dispenser such that cooling is sufficiently contro...

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Bibliographische Detailangaben
Hauptverfasser:	MCFEELY FENTON READ, YURKAS JOHN JACOB
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An apparatus and method for forming high-purity, high-conductivity metal films deposited by chemical vapor deposition (CVD) on a surface of a substrate is provided. The apparatus includes a cooling system which is in thermal contact with a precursor dispenser such that cooling is sufficiently controlled to prevent unwanted chemical impurities, i.e., non-metallic precursor byproducts, from being introduced into the deposited metal film. The apparatus and method can be used with a wide variety of metallic precursors and under most CVD reaction conditions.