Patterning method, thin film transistor matrix substrate manufacturing method, and exposure mask
There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are joined using a plurality of exposure masks. There is provided a patterning method for forming a group of...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are joined using a plurality of exposure masks. There is provided a patterning method for forming a group of patterns in which first patterns to serve as basic units are repetitively arranged using a plurality of exposure masks. When a third region sandwiched by a first region exposed with a first exposure mask and a second region exposed with a second exposure mask is exposed with the first and second exposure masks in a complementary manner, repetitive unit patterns for exposing the third region are different from the first patterns. |
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