HEAT-UP TIME REDUCTION BEFORE METAL DEPOSITION

HEAT-UP TIME REDUCTION BEFORE METAL DEPOSITION

A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the step of providing a semiconductor wafer including a dielectric layer formed on the wafer. The dielectric layer has vias formed therein. The wafer is placed in a deposition chamber whe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IGGULDEN ROY, SCHUTZ RONALD JOSEPH, WEBER STEFAN J, CLEVENGER LARRY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the step of providing a semiconductor wafer including a dielectric layer formed on the wafer. The dielectric layer has vias formed therein. The wafer is placed in a deposition chamber wherein the wafer has a first temperature achieved without preheating. A metal is deposited on the wafer which fills the vias wherein the metal depositing is initiated at a substantially same time as heating the wafer from the first temperature.