High frequency transistor device

High frequency transistor device

A semiconductor device includes a base region of a first conductivity type formed on a top surface of a collector layer of a second conductivity type, and the first conductivity type is opposite the second conductivity type. A groove is formed in the surface of the base region, and an emitter region...

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1. Verfasser: KUBO HIROTOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A semiconductor device includes a base region of a first conductivity type formed on a top surface of a collector layer of a second conductivity type, and the first conductivity type is opposite the second conductivity type. A groove is formed in the surface of the base region, and an emitter region of the second conductivity type is formed in the surface of the base region at the bottom of the groove. Thereby, fine base width Wb and low base resistance rb are obtained.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2002014650A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2002014650A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2002014650A13</originalsourceid><addsrcrecordid>eNrjZFDwyEzPUEgrSi0sTc1LrlQoKUrMK84sLskvUkhJLctMTuVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBkYGhiZmpgaOhsbEqQIAATkmXg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>High frequency transistor device</title><source>esp@cenet</source><creator>KUBO HIROTOSHI</creator><creatorcontrib>KUBO HIROTOSHI</creatorcontrib><description>A semiconductor device includes a base region of a first conductivity type formed on a top surface of a collector layer of a second conductivity type, and the first conductivity type is opposite the second conductivity type. A groove is formed in the surface of the base region, and an emitter region of the second conductivity type is formed in the surface of the base region at the bottom of the groove. Thereby, fine base width Wb and low base resistance rb are obtained.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2002</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020207&amp;DB=EPODOC&amp;CC=US&amp;NR=2002014650A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20020207&amp;DB=EPODOC&amp;CC=US&amp;NR=2002014650A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUBO HIROTOSHI</creatorcontrib><title>High frequency transistor device</title><description>A semiconductor device includes a base region of a first conductivity type formed on a top surface of a collector layer of a second conductivity type, and the first conductivity type is opposite the second conductivity type. A groove is formed in the surface of the base region, and an emitter region of the second conductivity type is formed in the surface of the base region at the bottom of the groove. Thereby, fine base width Wb and low base resistance rb are obtained.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2002</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDwyEzPUEgrSi0sTc1LrlQoKUrMK84sLskvUkhJLctMTuVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBkYGhiZmpgaOhsbEqQIAATkmXg</recordid><startdate>20020207</startdate><enddate>20020207</enddate><creator>KUBO HIROTOSHI</creator><scope>EVB</scope></search><sort><creationdate>20020207</creationdate><title>High frequency transistor device</title><author>KUBO HIROTOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2002014650A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2002</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUBO HIROTOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUBO HIROTOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High frequency transistor device</title><date>2002-02-07</date><risdate>2002</risdate><abstract>A semiconductor device includes a base region of a first conductivity type formed on a top surface of a collector layer of a second conductivity type, and the first conductivity type is opposite the second conductivity type. A groove is formed in the surface of the base region, and an emitter region of the second conductivity type is formed in the surface of the base region at the bottom of the groove. Thereby, fine base width Wb and low base resistance rb are obtained.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High frequency transistor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T07%3A27%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KUBO%20HIROTOSHI&rft.date=2002-02-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2002014650A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true