Multistack 3-dimensional high density semiconductor device and method for fabrication

A multistack 3-D semiconductor structure comprising a first level structure comprising a first semiconductor substrate and first active devices; and a second level structure comprising a SOI semiconductor structure bonded to the first level structure and further comprising second active devices; and...

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Bibliographische Detailangaben

Hauptverfasser:	SCHEPIS DOMINIC J, MA WILLIAM HSIOH-LIEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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