Method of manufacturing MIS semiconductor device that can control gate depletion and has low resistance gate electrode to which germanium is added

According to a method of manufacturing a MIS semiconductor device of the present invention, a gate insulating film is formed on a silicon substrate, and a silicon thin film is deposited on the gate insulating film, whereafter a silicon film containing germanium is deposited on the silicon thin film...

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Bibliographische Detailangaben

1. Verfasser:	MOGAMI TORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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