WAFER TRENCH ARTICLE AND PROCESS

WAFER TRENCH ARTICLE AND PROCESS

A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30. Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with polys...

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Hauptverfasser: WOODBURY DUSTIN ALEXANDER, CARMODY MICHAEL SEAN, MCNAMARA JEANNE MARIE, HEMMENWAY DONALD FRANK, RIVOLI ANTHONY LEE, BAJOR GEORGE, BEGLEY PATRICK ANTHONY
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WOODBURY DUSTIN ALEXANDER
CARMODY MICHAEL SEAN
MCNAMARA JEANNE MARIE
HEMMENWAY DONALD FRANK
RIVOLI ANTHONY LEE
BAJOR GEORGE
BEGLEY PATRICK ANTHONY
description A bonded wafer 100 has a device substrate 16 with isolation trenches 30 defining device regions 18. Oxide dogbone structures are removed before filling trenches 30. Voids 36 in the trenches are spaced from the top of the trenches. The trenches are covered with an oxide layer 30 and filled with polysilicon 34. A LOCOS mask structure comprising a layer of CVD pad oxide and silicon nitride 50 cover the trenches and the adjacent device substrate regions.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title WAFER TRENCH ARTICLE AND PROCESS
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