ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES

ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES

Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is...

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Hauptverfasser: BASHIR RASHID, MCGREGOR JOEL M, YINDEEPOL WIPAWAN
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BASHIR RASHID
MCGREGOR JOEL M
YINDEEPOL WIPAWAN
description Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is because voltage applied to the surrounding epitaxial silicon reduces the strength of the electric field between the silicon of the device and the surrounding silicon. Specifically, application of a positive voltage bias signal to surrounding epitaxial silicon equal to or more positive than the most positive potential occurring at the collector during normal operation of the device ensures that no walkout will occur.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2001023974A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2001023974A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2001023974A13</originalsourceid><addsrcrecordid>eNrjZLBz9fH09fRzDPH091Pwd1MId_Tx9g8NUfD0U_DwdPdQCPP3CXF0d1UICXL1c_ZQ8Az293EMcXVRcHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBoYGRsaW5iaOhsbEqQIA9cMq6w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES</title><source>esp@cenet</source><creator>BASHIR RASHID ; MCGREGOR JOEL M ; YINDEEPOL WIPAWAN</creator><creatorcontrib>BASHIR RASHID ; MCGREGOR JOEL M ; YINDEEPOL WIPAWAN</creatorcontrib><description>Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is because voltage applied to the surrounding epitaxial silicon reduces the strength of the electric field between the silicon of the device and the surrounding silicon. Specifically, application of a positive voltage bias signal to surrounding epitaxial silicon equal to or more positive than the most positive potential occurring at the collector during normal operation of the device ensures that no walkout will occur.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20010927&amp;DB=EPODOC&amp;CC=US&amp;NR=2001023974A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20010927&amp;DB=EPODOC&amp;CC=US&amp;NR=2001023974A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BASHIR RASHID</creatorcontrib><creatorcontrib>MCGREGOR JOEL M</creatorcontrib><creatorcontrib>YINDEEPOL WIPAWAN</creatorcontrib><title>ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES</title><description>Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is because voltage applied to the surrounding epitaxial silicon reduces the strength of the electric field between the silicon of the device and the surrounding silicon. Specifically, application of a positive voltage bias signal to surrounding epitaxial silicon equal to or more positive than the most positive potential occurring at the collector during normal operation of the device ensures that no walkout will occur.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBz9fH09fRzDPH091Pwd1MId_Tx9g8NUfD0U_DwdPdQCPP3CXF0d1UICXL1c_ZQ8Az293EMcXVRcHEN83R2DeZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBoYGRsaW5iaOhsbEqQIA9cMq6w</recordid><startdate>20010927</startdate><enddate>20010927</enddate><creator>BASHIR RASHID</creator><creator>MCGREGOR JOEL M</creator><creator>YINDEEPOL WIPAWAN</creator><scope>EVB</scope></search><sort><creationdate>20010927</creationdate><title>ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES</title><author>BASHIR RASHID ; MCGREGOR JOEL M ; YINDEEPOL WIPAWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2001023974A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BASHIR RASHID</creatorcontrib><creatorcontrib>MCGREGOR JOEL M</creatorcontrib><creatorcontrib>YINDEEPOL WIPAWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BASHIR RASHID</au><au>MCGREGOR JOEL M</au><au>YINDEEPOL WIPAWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES</title><date>2001-09-27</date><risdate>2001</risdate><abstract>Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is because voltage applied to the surrounding epitaxial silicon reduces the strength of the electric field between the silicon of the device and the surrounding silicon. Specifically, application of a positive voltage bias signal to surrounding epitaxial silicon equal to or more positive than the most positive potential occurring at the collector during normal operation of the device ensures that no walkout will occur.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T15%3A21%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BASHIR%20RASHID&rft.date=2001-09-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2001023974A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true