Buried guard rings and method for forming the same

A twin-well CMOS integrated circuit device includes an n-well region and a p-well region. Each of the n-well and p-well region includes spaced-apart regions which serve as drain and source regions, a channel region between the spaced-apart regions, a shallow trench isolation structure contiguous wit...

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1. Verfasser:	WONG SHYHYI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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