Bottom electrode of capacitor and fabricating method thereof

A bottom electrode of a capacitor and a method of fabrication is described. Hemispherical grained silicon (HSG) flexures are formed on a storage node to increase the effective area of the capacitor to increase the capacitance. The storage node includes a first region doped with phosphorous and a sec...

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Bibliographische Detailangaben

1. Verfasser:	YANG SUNG-HAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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