High critical temperature metal nitride layer with oxide or oxynitride seed layer
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a diff...
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| creator | Zhu, Mingwei Chen, Zhebo Patibandla, Nag B Yang, Zihao Cao, Yong Chowdhury, Mohammad Kamruzzaman Lavan, Shane Mangipudi, Shriram |
| description | A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal. |
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| title | High critical temperature metal nitride layer with oxide or oxynitride seed layer |
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