Fin field-effect transistor with a gate structure having a dielectric protection layer

A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate die...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Chun-Neng, Lian, Jian-Jou, Yeh, Ming-Hsi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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