Processing method, method of manufacturing semiconductor, and substrate processing apparatus
Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservatio...
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creator | Mizuguchi, Yasuhiro Ohashi, Naofumi Matsui, Shun Takasaki, Tadashi |
description | Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1). |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12165894B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12165894B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12165894B23</originalsourceid><addsrcrecordid>eNrjZIgJKMpPTi0uzsxLV8hNLcnIT9GB0gr5aQq5iXmlaYnJJaVFIPni1NzM5Py8lNLkkvwiHYXEvBSF4tKk4pKixJJUhQKEOYkFBYlAsdJiHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGRoZmphaeJkZEyMGgAmPDz8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Processing method, method of manufacturing semiconductor, and substrate processing apparatus</title><source>esp@cenet</source><creator>Mizuguchi, Yasuhiro ; Ohashi, Naofumi ; Matsui, Shun ; Takasaki, Tadashi</creator><creatorcontrib>Mizuguchi, Yasuhiro ; Ohashi, Naofumi ; Matsui, Shun ; Takasaki, Tadashi</creatorcontrib><description>Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241210&DB=EPODOC&CC=US&NR=12165894B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241210&DB=EPODOC&CC=US&NR=12165894B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mizuguchi, Yasuhiro</creatorcontrib><creatorcontrib>Ohashi, Naofumi</creatorcontrib><creatorcontrib>Matsui, Shun</creatorcontrib><creatorcontrib>Takasaki, Tadashi</creatorcontrib><title>Processing method, method of manufacturing semiconductor, and substrate processing apparatus</title><description>Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgJKMpPTi0uzsxLV8hNLcnIT9GB0gr5aQq5iXmlaYnJJaVFIPni1NzM5Py8lNLkkvwiHYXEvBSF4tKk4pKixJJUhQKEOYkFBYlAsdJiHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGRoZmphaeJkZEyMGgAmPDz8</recordid><startdate>20241210</startdate><enddate>20241210</enddate><creator>Mizuguchi, Yasuhiro</creator><creator>Ohashi, Naofumi</creator><creator>Matsui, Shun</creator><creator>Takasaki, Tadashi</creator><scope>EVB</scope></search><sort><creationdate>20241210</creationdate><title>Processing method, method of manufacturing semiconductor, and substrate processing apparatus</title><author>Mizuguchi, Yasuhiro ; Ohashi, Naofumi ; Matsui, Shun ; Takasaki, Tadashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12165894B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Mizuguchi, Yasuhiro</creatorcontrib><creatorcontrib>Ohashi, Naofumi</creatorcontrib><creatorcontrib>Matsui, Shun</creatorcontrib><creatorcontrib>Takasaki, Tadashi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mizuguchi, Yasuhiro</au><au>Ohashi, Naofumi</au><au>Matsui, Shun</au><au>Takasaki, Tadashi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Processing method, method of manufacturing semiconductor, and substrate processing apparatus</title><date>2024-12-10</date><risdate>2024</risdate><abstract>Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Processing method, method of manufacturing semiconductor, and substrate processing apparatus |
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