Transistor with integrated passive components

Transistor with integrated passive components

A device includes a semiconductor substrate, a source metallization over an active area of the semiconductor substrate, a through-substrate via electrically connected to the source metallization, and an input bond pad formed in the semiconductor substrate and spaced apart from the active area. The i...

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Hauptverfasser: Kabir, Humayun, Kim, Kevin, Shilimkar, Vikas, Khalil, Ibrahim
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kabir, Humayun
Kim, Kevin
Shilimkar, Vikas
Khalil, Ibrahim
description A device includes a semiconductor substrate, a source metallization over an active area of the semiconductor substrate, a through-substrate via electrically connected to the source metallization, and an input bond pad formed in the semiconductor substrate and spaced apart from the active area. The input bond pad is electrically connected to a set of gate structures. The device includes a first inductive coil over the semiconductor substrate between a first portion of the source metallization and a second portion of the source metallization and a first capacitor over the semiconductor substrate between the first portion of the source metallization and the second portion of the source metallization. The first inductive coil and the first capacitor are connected in series between the input bond pad and the through-substrate via.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transistor with integrated passive components
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