Capacitor formed with high resistance layer and method of manufacturing same

Capacitor formed with high resistance layer and method of manufacturing same

A method is provided for producing a semiconductor structure including at least one capacitor. The method includes: forming a first metal layer; forming a second metal layer; forming a third high resistance (HiR) layer interposed between the first metal layer and the second metal layer, wherein at l...

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Hauptverfasser: Chen, Shiou-Fan, Chang, Mingni, Huang, Hsuan-Ming
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Chen, Shiou-Fan
Chang, Mingni
Huang, Hsuan-Ming
description A method is provided for producing a semiconductor structure including at least one capacitor. The method includes: forming a first metal layer; forming a second metal layer; forming a third high resistance (HiR) layer interposed between the first metal layer and the second metal layer, wherein at least one of the first metal layer and the sconed metal layer at least partially overlap with the third HiR layer; and defining at least one of a first capacitor between the first metal layer and the third HiR layer and a second capacitor between the second metal layer and the third HiR layer. Suitably, the method is carried out subsequent to a front-end-of-line (FEOL) portion of a semiconductor fabrication process.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Capacitor formed with high resistance layer and method of manufacturing same
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