Non-volatile memory device including multi-stack memory block and operating method thereof
According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memo...
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creator | Yu, Jaeduk Cho, Jiho Lee, Yohan |
description | According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memory block and a second memory block, the method includes determining, by the memory controller, whether the first memory block satisfies a block reset condition, in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block, transferring data pre-programmed in the first memory block to the second memory block, erasing the first memory block, and re-programming the dummy cells of the first memory block. |
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COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241119&DB=EPODOC&CC=US&NR=12147666B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241119&DB=EPODOC&CC=US&NR=12147666B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yu, Jaeduk</creatorcontrib><creatorcontrib>Cho, Jiho</creatorcontrib><creatorcontrib>Lee, Yohan</creatorcontrib><title>Non-volatile memory device including multi-stack memory block and operating method thereof</title><description>According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memory block and a second memory block, the method includes determining, by the memory controller, whether the first memory block satisfies a block reset condition, in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block, transferring data pre-programmed in the first memory block to the second memory block, erasing the first memory block, and re-programming the dummy cells of the first memory block.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIjyy8_TLcvPSSzJzElVyE3NzS-qVEhJLctMTlXIzEvOKU3JzEtXyC3NKcnULS5JTM6GqUnKyQdyEvNSFPILUouA2kHKUksy8lMUSjJSi1Lz03gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGRoYm5mZmZk5ExMWoAaEc7sQ</recordid><startdate>20241119</startdate><enddate>20241119</enddate><creator>Yu, Jaeduk</creator><creator>Cho, Jiho</creator><creator>Lee, Yohan</creator><scope>EVB</scope></search><sort><creationdate>20241119</creationdate><title>Non-volatile memory device including multi-stack memory block and operating method thereof</title><author>Yu, Jaeduk ; Cho, Jiho ; Lee, Yohan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12147666B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu, Jaeduk</creatorcontrib><creatorcontrib>Cho, Jiho</creatorcontrib><creatorcontrib>Lee, Yohan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, Jaeduk</au><au>Cho, Jiho</au><au>Lee, Yohan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Non-volatile memory device including multi-stack memory block and operating method thereof</title><date>2024-11-19</date><risdate>2024</risdate><abstract>According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memory block and a second memory block, the method includes determining, by the memory controller, whether the first memory block satisfies a block reset condition, in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block, transferring data pre-programmed in the first memory block to the second memory block, erasing the first memory block, and re-programming the dummy cells of the first memory block.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS |
title | Non-volatile memory device including multi-stack memory block and operating method thereof |
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