Systems and methods for capture and replacement of hammered word line address

A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second i...

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Bibliographische Detailangaben

Hauptverfasser:	Lee, Joo-Sang, Riley, John E
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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