Continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices

Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semicond...

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Bibliographische Detailangaben

Hauptverfasser:	Steinberg, Oren, Oron, Moshe B, Cestier, Isabelle, Mentovich, Elad, Fülöp, Attila, Larsson, Anders Gösta
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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