Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device

Various embodiments of the present disclosure are directed towards a two-dimensional carrier gas (2DCG) semiconductor device comprising an ohmic source/drain electrode with a plurality of protrusions separated by gaps and protruding from a bottom surface of the ohmic source/drain electrode. The ohmi...

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Bibliographische Detailangaben

Hauptverfasser:	Liu, Shih-Chien, Tsai, Chun Lin, Chang, Yao-Chung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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