Semiconductor structure with multi-layers film
A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and includin...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Hsu, Sui-Ying Yang, Jing-Hwang Shih, Chih-Tsung Liu, Wei-Kang Tsui, Yingkit Felix |
description | A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12124083B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12124083B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12124083B23</originalsourceid><addsrcrecordid>eNrjZNALTs3NTM7PSylNLskvUiguKQIySotSFcozSzIUcktzSjJ1cxIrU4uKFdIyc3J5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChkaGRiYGFsZORMTFqAE0UK08</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor structure with multi-layers film</title><source>esp@cenet</source><creator>Hsu, Sui-Ying ; Yang, Jing-Hwang ; Shih, Chih-Tsung ; Liu, Wei-Kang ; Tsui, Yingkit Felix</creator><creatorcontrib>Hsu, Sui-Ying ; Yang, Jing-Hwang ; Shih, Chih-Tsung ; Liu, Wei-Kang ; Tsui, Yingkit Felix</creatorcontrib><description>A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.</description><language>eng</language><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241022&DB=EPODOC&CC=US&NR=12124083B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241022&DB=EPODOC&CC=US&NR=12124083B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hsu, Sui-Ying</creatorcontrib><creatorcontrib>Yang, Jing-Hwang</creatorcontrib><creatorcontrib>Shih, Chih-Tsung</creatorcontrib><creatorcontrib>Liu, Wei-Kang</creatorcontrib><creatorcontrib>Tsui, Yingkit Felix</creatorcontrib><title>Semiconductor structure with multi-layers film</title><description>A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.</description><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALTs3NTM7PSylNLskvUiguKQIySotSFcozSzIUcktzSjJ1cxIrU4uKFdIyc3J5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChkaGRiYGFsZORMTFqAE0UK08</recordid><startdate>20241022</startdate><enddate>20241022</enddate><creator>Hsu, Sui-Ying</creator><creator>Yang, Jing-Hwang</creator><creator>Shih, Chih-Tsung</creator><creator>Liu, Wei-Kang</creator><creator>Tsui, Yingkit Felix</creator><scope>EVB</scope></search><sort><creationdate>20241022</creationdate><title>Semiconductor structure with multi-layers film</title><author>Hsu, Sui-Ying ; Yang, Jing-Hwang ; Shih, Chih-Tsung ; Liu, Wei-Kang ; Tsui, Yingkit Felix</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12124083B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Sui-Ying</creatorcontrib><creatorcontrib>Yang, Jing-Hwang</creatorcontrib><creatorcontrib>Shih, Chih-Tsung</creatorcontrib><creatorcontrib>Liu, Wei-Kang</creatorcontrib><creatorcontrib>Tsui, Yingkit Felix</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, Sui-Ying</au><au>Yang, Jing-Hwang</au><au>Shih, Chih-Tsung</au><au>Liu, Wei-Kang</au><au>Tsui, Yingkit Felix</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor structure with multi-layers film</title><date>2024-10-22</date><risdate>2024</risdate><abstract>A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US12124083B2 |
source | esp@cenet |
subjects | OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS |
title | Semiconductor structure with multi-layers film |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T01%3A58%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hsu,%20Sui-Ying&rft.date=2024-10-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS12124083B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |