Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof
A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of hea...
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creator | Campardo, Giovanni Borghi, Massimo |
description | A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12120967B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12120967B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12120967B23</originalsourceid><addsrcrecordid>eNqNjTEKwkAURNNYiHqHb2_ARFBsFcVSUGv5bCbZhexu-LtRPIx3NQZBS6thmMe8YfI8ag5IlWZXgSyslwcZp-q2MK6i5ndFDQsXQ7dTgBgEupuoSRAaqGhuIA2OkC_JruhOo_ZFoNILWXZtySq20r3PqBFfCVvblzcr4N4bNQS-HCeDkuuAySdHyXS_O28PKRp_7ays4BCvl1OWZ_l8vVxt8sU_zAt6oFTQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof</title><source>esp@cenet</source><creator>Campardo, Giovanni ; Borghi, Massimo</creator><creatorcontrib>Campardo, Giovanni ; Borghi, Massimo</creatorcontrib><description>A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241015&DB=EPODOC&CC=US&NR=12120967B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20241015&DB=EPODOC&CC=US&NR=12120967B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Campardo, Giovanni</creatorcontrib><creatorcontrib>Borghi, Massimo</creatorcontrib><title>Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof</title><description>A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTEKwkAURNNYiHqHb2_ARFBsFcVSUGv5bCbZhexu-LtRPIx3NQZBS6thmMe8YfI8ag5IlWZXgSyslwcZp-q2MK6i5ndFDQsXQ7dTgBgEupuoSRAaqGhuIA2OkC_JruhOo_ZFoNILWXZtySq20r3PqBFfCVvblzcr4N4bNQS-HCeDkuuAySdHyXS_O28PKRp_7ays4BCvl1OWZ_l8vVxt8sU_zAt6oFTQ</recordid><startdate>20241015</startdate><enddate>20241015</enddate><creator>Campardo, Giovanni</creator><creator>Borghi, Massimo</creator><scope>EVB</scope></search><sort><creationdate>20241015</creationdate><title>Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof</title><author>Campardo, Giovanni ; Borghi, Massimo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12120967B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Campardo, Giovanni</creatorcontrib><creatorcontrib>Borghi, Massimo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Campardo, Giovanni</au><au>Borghi, Massimo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof</title><date>2024-10-15</date><risdate>2024</risdate><abstract>A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
title | Phase-change memory including phase-change elements in series with respective heater elements and methods for manufacturing, programming, and reading thereof |
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