Method of programming MLC memory device and related MLC memory device

Method of programming MLC memory device and related MLC memory device

When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial progr...

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Hauptverfasser: Wang, Chia-Wen, Hsueh, Jen-Yang, Huang, Chia-Hui, Chou, Ling-Hsiu, Hsu, Chih-Yang, Chen, Chien-Hung
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Wang, Chia-Wen
Hsueh, Jen-Yang
Huang, Chia-Hui
Chou, Ling-Hsiu
Hsu, Chih-Yang
Chen, Chien-Hung
description When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.
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STATIC STORES
title Method of programming MLC memory device and related MLC memory device
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