Semiconductor device
A semiconductor device according to the invention of the present application includes a support, a semiconductor chip provided on the support and a die bond material for bonding a back surface of the semiconductor chip to the support, wherein a plurality of cutouts is formed at edges formed between...
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creator | Asada, Tomoyuki Tsunami, Daisuke Fukuda, Eri |
description | A semiconductor device according to the invention of the present application includes a support, a semiconductor chip provided on the support and a die bond material for bonding a back surface of the semiconductor chip to the support, wherein a plurality of cutouts is formed at edges formed between the back surface and side surfaces of the semiconductor chip connected to the back surface, and the die bond material is provided integrally over the plurality of cutouts. |
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Tsunami, Daisuke ; Fukuda, Eri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12113040B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Asada, Tomoyuki</creatorcontrib><creatorcontrib>Tsunami, Daisuke</creatorcontrib><creatorcontrib>Fukuda, Eri</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Asada, Tomoyuki</au><au>Tsunami, Daisuke</au><au>Fukuda, Eri</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2024-10-08</date><risdate>2024</risdate><abstract>A semiconductor device according to the invention of the present application includes a support, a semiconductor chip provided on the support and a die bond material for bonding a back surface of the semiconductor chip to the support, wherein a plurality of cutouts is formed at edges formed between the back surface and side surfaces of the semiconductor chip connected to the back surface, and the die bond material is provided integrally over the plurality of cutouts.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device |
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