Forward looking algorithm for vertical integrated cross-point array memory

Systems and methods for reading a first and second plurality of memory cells include applying a first ramping voltage with a first increment for each ramping step to read the first plurality of cells, counting, among the first plurality of cells at each ramping step, a first number of logic 1 cells,...

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Bibliographische Detailangaben

1. Verfasser:	Bedeschi, Ferdinando
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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