Semiconductor memory device and method for manufacturing the same

A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a...

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Bibliographische Detailangaben
Hauptverfasser: Tokuhira, Hiroki, Kanemura, Takahisa, Kondo, Shigeo, Hogyoku, Michiru
Format: Patent
Sprache:eng
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