Semiconductor device with extrinsic base region and method of fabrication therefor

A semiconductor device, such as a heterojunction bipolar transistor (HBT), may include an extrinsic base region that is connected to a collector region via semiconductor material formed in an opening in one or more dielectric layers interposed between the extrinsic base region and the collector regi...

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Bibliographische Detailangaben

Hauptverfasser:	Radic, Ljubo, Donkers, Johannes Josephus Theodorus Marinus, Grote, Bernhard
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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