Non-volatile memory with programmable resistance non-data word line

In order to lower the peak and average current through the channel (thereby lowering peak and average power consumption) during program-verify, which exhibits a word line dependency, the inventors propose to program dummy memory cells connected to a dummy word line before programming data memory cel...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Razzak, Towhidur, Kumar, Ravi, Yuan, Jiahui, Zainuddin, Abu Naser
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS
Online-Zugang:	Volltext bestellen
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