Semiconductor devices and data storage systems including the same
A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper sep...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Han, Jeehoon Kanamori, Kohji Kang, Shinhwan |
| description | A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper separation region between the first and second separation regions and extending through a portion of the stack structure; a plurality of channel structures between the first and second separation regions and extending through the stack structure; and a plurality of first vertical structures each extending through a particular one of the first and second separation regions. Each of the first and second separation regions has a first width in a second direction that is perpendicular to the first direction. Each first vertical structure has a second width in the second direction, the second width being greater than the first width. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12096637B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12096637B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12096637B23</originalsourceid><addsrcrecordid>eNrjZHAMTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUUhJLElUKAaKJqanKhRXFpek5hYrZOYl55SmZOalK5RkAEUTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChkYGlmZmxuZORMTFqAC--MiA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor devices and data storage systems including the same</title><source>esp@cenet</source><creator>Han, Jeehoon ; Kanamori, Kohji ; Kang, Shinhwan</creator><creatorcontrib>Han, Jeehoon ; Kanamori, Kohji ; Kang, Shinhwan</creatorcontrib><description>A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper separation region between the first and second separation regions and extending through a portion of the stack structure; a plurality of channel structures between the first and second separation regions and extending through the stack structure; and a plurality of first vertical structures each extending through a particular one of the first and second separation regions. Each of the first and second separation regions has a first width in a second direction that is perpendicular to the first direction. Each first vertical structure has a second width in the second direction, the second width being greater than the first width.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12096637B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12096637B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Han, Jeehoon</creatorcontrib><creatorcontrib>Kanamori, Kohji</creatorcontrib><creatorcontrib>Kang, Shinhwan</creatorcontrib><title>Semiconductor devices and data storage systems including the same</title><description>A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper separation region between the first and second separation regions and extending through a portion of the stack structure; a plurality of channel structures between the first and second separation regions and extending through the stack structure; and a plurality of first vertical structures each extending through a particular one of the first and second separation regions. Each of the first and second separation regions has a first width in a second direction that is perpendicular to the first direction. Each first vertical structure has a second width in the second direction, the second width being greater than the first width.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUUhJLElUKAaKJqanKhRXFpek5hYrZOYl55SmZOalK5RkAEUTc1N5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChkYGlmZmxuZORMTFqAC--MiA</recordid><startdate>20240917</startdate><enddate>20240917</enddate><creator>Han, Jeehoon</creator><creator>Kanamori, Kohji</creator><creator>Kang, Shinhwan</creator><scope>EVB</scope></search><sort><creationdate>20240917</creationdate><title>Semiconductor devices and data storage systems including the same</title><author>Han, Jeehoon ; Kanamori, Kohji ; Kang, Shinhwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12096637B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Han, Jeehoon</creatorcontrib><creatorcontrib>Kanamori, Kohji</creatorcontrib><creatorcontrib>Kang, Shinhwan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han, Jeehoon</au><au>Kanamori, Kohji</au><au>Kang, Shinhwan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices and data storage systems including the same</title><date>2024-09-17</date><risdate>2024</risdate><abstract>A semiconductor device includes a substrate; a stack structure on the substrate and including an alternating stack of interlayer insulating layers and gate electrodes; first and second separation regions each extending through the stack structure and extending in a first direction; a first upper separation region between the first and second separation regions and extending through a portion of the stack structure; a plurality of channel structures between the first and second separation regions and extending through the stack structure; and a plurality of first vertical structures each extending through a particular one of the first and second separation regions. Each of the first and second separation regions has a first width in a second direction that is perpendicular to the first direction. Each first vertical structure has a second width in the second direction, the second width being greater than the first width.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US12096637B2 |
| source | esp@cenet |
| subjects | ELECTRICITY |
| title | Semiconductor devices and data storage systems including the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T15%3A58%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Han,%20Jeehoon&rft.date=2024-09-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS12096637B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |