Semiconductor devices and method of fabricating the same

A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kim, Dahye, Kim, Jaemun, Kim, Jinbum, Kim, Gyeom, Kim, Dongwoo, Lee, Seunghun, Kim, Dohee
Format: Patent
Sprache:eng
Schlagworte:
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