Transistor circuits including fringeless transistors and method of making the same

A field effect transistor includes a gate dielectric and a gate electrode overlying an active region and contacting a sidewall of a trench isolation structure. The transistor may be a fringeless transistor in which the gate electrode does not overlie a portion of the trench isolation region. A plana...

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Bibliographische Detailangaben

Hauptverfasser:	Fujikura, Eiichi, Ogawa, Hiroyuki, Iwata, Dai, Nakatsuji, Hiroshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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