Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same
A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film whi...
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| creator | Baek, Dong Kwan Shin, Yu Kyung Kim, Su Hwan Jung, Kyoo Ho Kang, Sang Yeol Choi, Won Sik |
| description | A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf). |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12094924B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12094924B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12094924B23</originalsourceid><addsrcrecordid>eNqVz7EKwjAQBuAsDqK-w7kraOzS1aK4q3M5k0sbaJKSXASfylc0g4uDoNPx83_wc1PxbHBEZTlESByz4hxpBYmcVcHrkkvhyIX4AE13qwisV0PW1nfAPUFCV7wj7oMGU7DBW7QK-ROg19_Qf1tzMTE4JFq870wsj4dLc1rTGFpK5RfyxO31vJWbuqpltZe7X8wLUsBbiQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same</title><source>esp@cenet</source><creator>Baek, Dong Kwan ; Shin, Yu Kyung ; Kim, Su Hwan ; Jung, Kyoo Ho ; Kang, Sang Yeol ; Choi, Won Sik</creator><creatorcontrib>Baek, Dong Kwan ; Shin, Yu Kyung ; Kim, Su Hwan ; Jung, Kyoo Ho ; Kang, Sang Yeol ; Choi, Won Sik</creatorcontrib><description>A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12094924B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12094924B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Baek, Dong Kwan</creatorcontrib><creatorcontrib>Shin, Yu Kyung</creatorcontrib><creatorcontrib>Kim, Su Hwan</creatorcontrib><creatorcontrib>Jung, Kyoo Ho</creatorcontrib><creatorcontrib>Kang, Sang Yeol</creatorcontrib><creatorcontrib>Choi, Won Sik</creatorcontrib><title>Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same</title><description>A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqVz7EKwjAQBuAsDqK-w7kraOzS1aK4q3M5k0sbaJKSXASfylc0g4uDoNPx83_wc1PxbHBEZTlESByz4hxpBYmcVcHrkkvhyIX4AE13qwisV0PW1nfAPUFCV7wj7oMGU7DBW7QK-ROg19_Qf1tzMTE4JFq870wsj4dLc1rTGFpK5RfyxO31vJWbuqpltZe7X8wLUsBbiQ</recordid><startdate>20240917</startdate><enddate>20240917</enddate><creator>Baek, Dong Kwan</creator><creator>Shin, Yu Kyung</creator><creator>Kim, Su Hwan</creator><creator>Jung, Kyoo Ho</creator><creator>Kang, Sang Yeol</creator><creator>Choi, Won Sik</creator><scope>EVB</scope></search><sort><creationdate>20240917</creationdate><title>Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same</title><author>Baek, Dong Kwan ; Shin, Yu Kyung ; Kim, Su Hwan ; Jung, Kyoo Ho ; Kang, Sang Yeol ; Choi, Won Sik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12094924B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Baek, Dong Kwan</creatorcontrib><creatorcontrib>Shin, Yu Kyung</creatorcontrib><creatorcontrib>Kim, Su Hwan</creatorcontrib><creatorcontrib>Jung, Kyoo Ho</creatorcontrib><creatorcontrib>Kang, Sang Yeol</creatorcontrib><creatorcontrib>Choi, Won Sik</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baek, Dong Kwan</au><au>Shin, Yu Kyung</au><au>Kim, Su Hwan</au><au>Jung, Kyoo Ho</au><au>Kang, Sang Yeol</au><au>Choi, Won Sik</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same</title><date>2024-09-17</date><risdate>2024</risdate><abstract>A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same |
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