Method and apparatus for reducing light leakage at memory nodes in CMOS image sensors

Method and apparatus for reducing light leakage at memory nodes in CMOS image sensors

Disclosed is a CMOS image sensor with global shutters and a method for fabricating the CMOS image sensor. In one embodiment, a semiconductor device, includes: a light-sensing region; a charge-storage region; a light-shielding structure; and at least one via contact; wherein the charge-storage region...

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Hauptverfasser: Chen, Ming-Hsien, Tseng, Chih-Yu
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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creator Chen, Ming-Hsien
Tseng, Chih-Yu
description Disclosed is a CMOS image sensor with global shutters and a method for fabricating the CMOS image sensor. In one embodiment, a semiconductor device, includes: a light-sensing region; a charge-storage region; a light-shielding structure; and at least one via contact; wherein the charge-storage region is spatially configured adjacent to the light-sensing region in a lateral direction, wherein the light-shielding structure is configured over the charge-storage region in a vertical direction so as to prevent incident light leaking from the light-sensing region to the signal-processing region, wherein the light-shielding structure is configured in an interlayer dielectric (ILD) layer, and wherein the light-shielding structure is simultaneously formed with the at least one via contact.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
title Method and apparatus for reducing light leakage at memory nodes in CMOS image sensors
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