Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles
An storage device is provided. The storage device includes: a nonvolatile memory; and at least one processor configured to: obtain an input symbol to be stored in a target memory cell among a plurality of memory cells of the nonvolatile memory; obtain cell features of the plurality of memory cells;...
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creator | Berman, Amit Blaichman, Evgeny Fuks, Gari |
description | An storage device is provided. The storage device includes: a nonvolatile memory; and at least one processor configured to: obtain an input symbol to be stored in a target memory cell among a plurality of memory cells of the nonvolatile memory; obtain cell features of the plurality of memory cells; determine a target voltage for the target memory cell based on the input symbol and the cell features of the plurality of memory cells; and provide the target voltage to the target memory cell. |
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The storage device includes: a nonvolatile memory; and at least one processor configured to: obtain an input symbol to be stored in a target memory cell among a plurality of memory cells of the nonvolatile memory; obtain cell features of the plurality of memory cells; determine a target voltage for the target memory cell based on the input symbol and the cell features of the plurality of memory cells; and provide the target voltage to the target memory cell.</description><language>eng</language><subject>CALCULATING ; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS ; COMPUTING ; COUNTING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12094544B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240917&DB=EPODOC&CC=US&NR=12094544B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Berman, Amit</creatorcontrib><creatorcontrib>Blaichman, Evgeny</creatorcontrib><creatorcontrib>Fuks, Gari</creatorcontrib><title>Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles</title><description>An storage device is provided. The storage device includes: a nonvolatile memory; and at least one processor configured to: obtain an input symbol to be stored in a target memory cell among a plurality of memory cells of the nonvolatile memory; obtain cell features of the plurality of memory cells; determine a target voltage for the target memory cell based on the input symbol and the cell features of the plurality of memory cells; and provide the target voltage to the target memory cell.</description><subject>CALCULATING</subject><subject>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwjAUBbtxIeodvgcoaK2LbpWKy4K6Lt_0JVTSn5BEobeXqgdwNTAz80ya4EzgYejF0H2kCKuJu8czpsn4b6WXs4kNKHEwSJGUGzwk8mfSLpCCtXly-UTqJSFoBIgCsXTU1KRGZRGX2UyzjVj9uMjWp_p6POfwrkX0rCBI7e2yLTZVuS_LQ7H753kD-k5C6Q</recordid><startdate>20240917</startdate><enddate>20240917</enddate><creator>Berman, Amit</creator><creator>Blaichman, Evgeny</creator><creator>Fuks, Gari</creator><scope>EVB</scope></search><sort><creationdate>20240917</creationdate><title>Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles</title><author>Berman, Amit ; Blaichman, Evgeny ; Fuks, Gari</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12094544B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>CALCULATING</topic><topic>COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Berman, Amit</creatorcontrib><creatorcontrib>Blaichman, Evgeny</creatorcontrib><creatorcontrib>Fuks, Gari</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Berman, Amit</au><au>Blaichman, Evgeny</au><au>Fuks, Gari</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles</title><date>2024-09-17</date><risdate>2024</risdate><abstract>An storage device is provided. 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subjects | CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING INFORMATION STORAGE PHYSICS STATIC STORES |
title | Programming by self adjusting program voltage targets compensating for cell-to-cell interference and PE cycles |
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