Fin field-effect transistor devices and methods of forming the same

A method of forming a semiconductor device includes forming a first fin and a second fin protruding above a substrate; forming isolation regions on opposing sides of the first fin and the second fin; forming a metal gate over the first fin and over the second fin, the metal gate being surrounded by...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hung, Chih-Chang, Lin, Yih-Ann, Feng, Chieh-Ning, Chen, Ryan Chia-Jen, Lai, Chun-Liang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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