Semiconductor structure and method for forming the same, and memory and method for forming the same

Semiconductor structure and method for forming the same, and memory and method for forming the same

The present invention relates to a semiconductor structure and a method for forming the same, and a memory and a method for forming the same. The method for forming the semiconductor structure includes: providing a substrate on which a sacrificial layer and an active layer located on the sacrificial...

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Hauptverfasser: Ping, Er-Xuan, Zhu, Yiming
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Sprache:eng
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ELECTRICITY
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creator Ping, Er-Xuan
Zhu, Yiming
description The present invention relates to a semiconductor structure and a method for forming the same, and a memory and a method for forming the same. The method for forming the semiconductor structure includes: providing a substrate on which a sacrificial layer and an active layer located on the sacrificial layer are formed; patterning the active layer to form several discrete active pillars; removing the sacrificial layer to form a gap; forming a bit line within the gap; and forming a semiconductor pillar on the top of the active pillar. The above method can reduce the planar size of the transistor and increase the storage density of the memory.
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title Semiconductor structure and method for forming the same, and memory and method for forming the same
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