Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer

In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arran...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Wu, Cheng-Ta, Chen, Eugene, Cheng, Yu-Hung, Chiang, Chen-Hao, Tu, Yeur-Luen, Kalnitsky, Alexander
Format: Patent
Sprache:eng
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