Magnetic memory device

Magnetic memory device

According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer and a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer, first, second and third nonmagnetic layers. The fir...

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Hauptverfasser: Eeh, Youngmin, Sawada, Kazuya, Kitagawa, Eiji, Oikawa, Tadaaki, Isoda, Taiga
Format: Patent
Sprache:eng
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ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Eeh, Youngmin
Sawada, Kazuya
Kitagawa, Eiji
Oikawa, Tadaaki
Isoda, Taiga
description According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer and a third magnetic layer having a fixed magnetization direction antiparallel to a magnetization direction of the second magnetic layer, first, second and third nonmagnetic layers. The firs nonmagnetic layer is between the first and second magnetic layers, the second magnetic layer is between the first nonmagnetic layer and the third magnetic layer, the third magnetic layer is between the second magnetic layer and the second nonmagnetic layer, the third nonmagnetic layer is between the second and the third magnetic layers, the third magnetic layer contains Co and Pt, and the second nonmagnetic layer contains at least one of Mo and W.
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Magnetic memory device
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