Pixel-type semiconductor light-emitting device and method of manufacturing the same
A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kwon, Yong-Min Choi, Pun-Jae Ko, Geun-Woo Lee, Jung-Wook Lee, Jong-Hyun |
| description | A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12046627B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12046627B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12046627B23</originalsourceid><addsrcrecordid>eNqNjEsKwjAUALtxIeodngcIaJS6VxSXQnVdHslLE8iP5kX09lbwAK4GhmHmTXdzL_KC35mgUHAqRV0VpxG8GyyLSTG7OICmp1MEGDUEYps0JAMBYzWouI7fhO30wEDLZmbQF1r9uGjWl_P9dBWUU08lo6JI3D-6rdzs21YejnL3T_MBltQ48A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pixel-type semiconductor light-emitting device and method of manufacturing the same</title><source>esp@cenet</source><creator>Kwon, Yong-Min ; Choi, Pun-Jae ; Ko, Geun-Woo ; Lee, Jung-Wook ; Lee, Jong-Hyun</creator><creatorcontrib>Kwon, Yong-Min ; Choi, Pun-Jae ; Ko, Geun-Woo ; Lee, Jung-Wook ; Lee, Jong-Hyun</creatorcontrib><description>A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240723&DB=EPODOC&CC=US&NR=12046627B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240723&DB=EPODOC&CC=US&NR=12046627B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kwon, Yong-Min</creatorcontrib><creatorcontrib>Choi, Pun-Jae</creatorcontrib><creatorcontrib>Ko, Geun-Woo</creatorcontrib><creatorcontrib>Lee, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Jong-Hyun</creatorcontrib><title>Pixel-type semiconductor light-emitting device and method of manufacturing the same</title><description>A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjEsKwjAUALtxIeodngcIaJS6VxSXQnVdHslLE8iP5kX09lbwAK4GhmHmTXdzL_KC35mgUHAqRV0VpxG8GyyLSTG7OICmp1MEGDUEYps0JAMBYzWouI7fhO30wEDLZmbQF1r9uGjWl_P9dBWUU08lo6JI3D-6rdzs21YejnL3T_MBltQ48A</recordid><startdate>20240723</startdate><enddate>20240723</enddate><creator>Kwon, Yong-Min</creator><creator>Choi, Pun-Jae</creator><creator>Ko, Geun-Woo</creator><creator>Lee, Jung-Wook</creator><creator>Lee, Jong-Hyun</creator><scope>EVB</scope></search><sort><creationdate>20240723</creationdate><title>Pixel-type semiconductor light-emitting device and method of manufacturing the same</title><author>Kwon, Yong-Min ; Choi, Pun-Jae ; Ko, Geun-Woo ; Lee, Jung-Wook ; Lee, Jong-Hyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12046627B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kwon, Yong-Min</creatorcontrib><creatorcontrib>Choi, Pun-Jae</creatorcontrib><creatorcontrib>Ko, Geun-Woo</creatorcontrib><creatorcontrib>Lee, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Jong-Hyun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kwon, Yong-Min</au><au>Choi, Pun-Jae</au><au>Ko, Geun-Woo</au><au>Lee, Jung-Wook</au><au>Lee, Jong-Hyun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pixel-type semiconductor light-emitting device and method of manufacturing the same</title><date>2024-07-23</date><risdate>2024</risdate><abstract>A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US12046627B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Pixel-type semiconductor light-emitting device and method of manufacturing the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T23%3A43%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kwon,%20Yong-Min&rft.date=2024-07-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS12046627B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |