Semiconductor structure including sectioned well region

Disclosed is a semiconductor structure including a substrate with a first type conductivity (e.g., a P− silicon substrate); a deep well region within the substrate and having a second type conductivity (e.g., a deep Nwell); alternating stripes of first and second well regions (e.g., of Pwells and Nw...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jain, Navneet, Chan, Nigel, Rashed, Mahbub
Format: Patent
Sprache:eng
Schlagworte:
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