Method for detecting temperature of thermal chamber
The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtai...
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| creator | Yu, Dengyong Liu, Liying Cao, Gongbai Lin, Chihhsin |
| description | The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US12046520B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US12046520B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US12046520B23</originalsourceid><addsrcrecordid>eNrjZDD2TS3JyE9RSMsvUkhJLUlNLsnMS1coSc0tSC1KLCktSlXIT1MoyUgtyk3MUUjOSMxNSi3iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGRgYmZqZGBk5GxsSoAQAH2SyX</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for detecting temperature of thermal chamber</title><source>esp@cenet</source><creator>Yu, Dengyong ; Liu, Liying ; Cao, Gongbai ; Lin, Chihhsin</creator><creatorcontrib>Yu, Dengyong ; Liu, Liying ; Cao, Gongbai ; Lin, Chihhsin</creatorcontrib><description>The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING QUANTITY OF HEAT ; MEASURING TEMPERATURE ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING ; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240723&DB=EPODOC&CC=US&NR=12046520B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240723&DB=EPODOC&CC=US&NR=12046520B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yu, Dengyong</creatorcontrib><creatorcontrib>Liu, Liying</creatorcontrib><creatorcontrib>Cao, Gongbai</creatorcontrib><creatorcontrib>Lin, Chihhsin</creatorcontrib><title>Method for detecting temperature of thermal chamber</title><description>The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING QUANTITY OF HEAT</subject><subject>MEASURING TEMPERATURE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><subject>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD2TS3JyE9RSMsvUkhJLUlNLsnMS1coSc0tSC1KLCktSlXIT1MoyUgtyk3MUUjOSMxNSi3iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGRgYmZqZGBk5GxsSoAQAH2SyX</recordid><startdate>20240723</startdate><enddate>20240723</enddate><creator>Yu, Dengyong</creator><creator>Liu, Liying</creator><creator>Cao, Gongbai</creator><creator>Lin, Chihhsin</creator><scope>EVB</scope></search><sort><creationdate>20240723</creationdate><title>Method for detecting temperature of thermal chamber</title><author>Yu, Dengyong ; Liu, Liying ; Cao, Gongbai ; Lin, Chihhsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US12046520B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING QUANTITY OF HEAT</topic><topic>MEASURING TEMPERATURE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><topic>THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR</topic><toplevel>online_resources</toplevel><creatorcontrib>Yu, Dengyong</creatorcontrib><creatorcontrib>Liu, Liying</creatorcontrib><creatorcontrib>Cao, Gongbai</creatorcontrib><creatorcontrib>Lin, Chihhsin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu, Dengyong</au><au>Liu, Liying</au><au>Cao, Gongbai</au><au>Lin, Chihhsin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for detecting temperature of thermal chamber</title><date>2024-07-23</date><risdate>2024</risdate><abstract>The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS SEMICONDUCTOR DEVICES TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR |
| title | Method for detecting temperature of thermal chamber |
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